Power MOSFET

1.60

N Channel, 55 V, 41 A, 0.022 ohm, TO-220AB

2 laos (saab järeltellida)

Tootekood: 93 Kategooria:

Kirjeldus

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Logic-Level Gate Drive
Advanced Process Technology l Dynamic dv/dt Rating
175°C Operating Temperature l Fast Switching
Fully Avalanche Rated
Lead-Free

Lisainfo

Kaal 2 g
Mõõtmed 2 × 4 × 1 cm

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